收藏本站
HUF75639G3, HUF75639P3, HUF75639S3S,
HUF75639S3
Data Sheet
N-Channel UltraFET Power MOSFET
100 V, 56 A, 25 m?
These N-Channel power MOSFETs are manufactured
using the innovative UltraFET process. This advanced
process technology achieves the lowest possible on-
resistance per silicon area, resulting in outstanding
performance. This device is capable of withstanding high
energy in the avalanche mode and the diode exhibits very
low reverse recovery time and stored charge. It was
designed for use in applications where power efficiency is
important, such as switching regulators, switching
converters, motor drivers, relay drivers, low-voltage bus
switches, and power management in portable and battery-
operated products.
Formerly developmental type TA75639.
Ordering Information
October 20 13
Features
? 56A, 100V
? Simulation Models
- Temperature Compensated PSPICE? and SABER?
Electrical Models
- Spice and Saber Thermal Impedance Models
- www.fairchildsemi.com
? Peak Current vs Pulse Width Curve
? UIS Rating Curve
? Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
PART NUMBER
HUF75639G3
HUF75639P3
HUF75639S3S T
HUF75639S3
PACKAGE
TO-247
TO-220AB
TO-263AB
TO-262AA
BRAND
75639G
75639P
75639S
75639S
G
D
S
Packaging
JEDEC STYLE TO-247
JEDEC TO-220AB
DRAIN
(TAB)
JEDEC TO-263AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
TO-262AA
SOURCE
DRAIN
GATE
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
GATE
SOURCE
DRAIN
(TAB)
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
?2001 Fairchild Semiconductor Corporation
HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Rev. C0
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
A6RS-101RS SMT ROTARY DIP
18620451 LED BAYONET MULTI T3-1/4 28V GRN
805M1-020-01 SENS ACCLRMTR 20G ADHESIVE MT
CR4860-500 TRANSDCR VLTGE 0-500VAC AVRG RMS
564-2210-223F LED CBI 3MM 3X1 GRN,GRN,YLW TINT
805M1-200-01 SENS ACCLRMTR 200G ADHESIVE MT
564-2210-132F LED CBI 3MM 3X1 RED,YLW,GRN TINT
18620450 LED BAYONET MULTI T3-1/4 28V RED
相关代理商/技术参数
HUF75639P3 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFETN CH100V56ATO-220AB 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET,N CH,100V,56A,TO-220AB
HUF75639P3 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
HUF75639P3_F102 制造商:Fairchild Semiconductor Corporation 功能描述:
HUF75639P3_NL 制造商:Fairchild Semiconductor Corporation 功能描述:
HUF75639P3_Q 功能描述:MOSFET 56a 100V N-Ch UltraFET 0.025 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
HUF75639S3 功能描述:MOSFET TO-262 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
HUF75639S3_NL 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述:
HUF75639S3R4851 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:56A, 115V, 0.025 Ohm, N-Channel UltraFET Power MOSFET